Characterization of memories

Characterization of memory blocks is carried out in the following conditions:

  • maximal speed (high-speed models, maximal power supply, minimal temperature, extraction with minimal parasitic parameters)
  • typical speed (typical models, typical power supply, typical temperature, extraction with typical parasitic parameters)
  • minimal speed (low-speed models, minimal power supply, maximal temperature, extraction with maximal parasitic parameters)

 Characterized parameters of RAM memories

  • access time
  • clock cycle time
  • the high clock time
  • the low clock time
  • output data switching time
  • setup time of the address signal relative to the clock
  • hold time of the address signal relative to clock
  • setup time of the data relative to clock
  • hold time of the data relative to the clock
  • setup time of the memory selection signal relative to the clock
  • hold time of the memory selection signal relative to the clock
  • setup time of the write permission signal relative to the clock
  • hold time of the write permission signal relative to the clock
  • input capacitance
  • dynamic power consumption in reading mode
  • dynamic power consumption in writing mode
  • dynamic power consumption in sleep mode  
  • leakage current

Characterized parameters of OTP memories

  • access time
  • clock cycle time
  • the high clock time
  • the low clock time
  • output data switching time
  • setup time of the address signal relative to the clock
  • hold time of the address signal relative to clock
  • setup time of the memory selection signal relative to the clock
  • hold time of the memory selection signal relative to the clock
  • input capacitance
  • dynamic power consumption in reading mode
  • dynamic power consumption in sleep mode  
  • leakage current