Characterization of memories
Characterization of memory blocks is carried out in the following conditions:
- maximal speed (high-speed models, maximal power supply, minimal temperature, extraction with minimal parasitic parameters)
- typical speed (typical models, typical power supply, typical temperature, extraction with typical parasitic parameters)
- minimal speed (low-speed models, minimal power supply, maximal temperature, extraction with maximal parasitic parameters)
Characterized parameters of RAM memories
- access time
- clock cycle time
- the high clock time
- the low clock time
- output data switching time
- setup time of the address signal relative to the clock
- hold time of the address signal relative to clock
- setup time of the data relative to clock
- hold time of the data relative to the clock
- setup time of the memory selection signal relative to the clock
- hold time of the memory selection signal relative to the clock
- setup time of the write permission signal relative to the clock
- hold time of the write permission signal relative to the clock
- input capacitance
- dynamic power consumption in reading mode
- dynamic power consumption in writing mode
- dynamic power consumption in sleep mode
- leakage current
Characterized parameters of OTP memories
- access time
- clock cycle time
- the high clock time
- the low clock time
- output data switching time
- setup time of the address signal relative to the clock
- hold time of the address signal relative to clock
- setup time of the memory selection signal relative to the clock
- hold time of the memory selection signal relative to the clock
- input capacitance
- dynamic power consumption in reading mode
- dynamic power consumption in sleep mode
- leakage current