Radiation Tolerant Library

Thesys-Intechna offers radiation tolerant cell libraries design to minimize heavy charged particle negative effects in IC: 
  • Сhange of MOS characteristics
    • Degradation of timing and noise parameters
    • Threshold voltage
    • Leakage current
  • Single Event Effects
    • Single Event Transient (SET)
    • Single Event Upset (SEU) 
    • Single Event Latch-up (SEL)
    • Single Event Functional Interrupt (SEFI)
We apply radiation hardening design techniques providing excellent performance characteristics and SEE immunity: 

  • Special NMOS construct (bird’s beak effect elimination)
  • SOI technology
  • Deep Trench Isolation (SEL)
  • Schematic modifications (SEU)
    • DICE cell
    • CPQ cell
    • HIT cell

Hammer NMOS Devices

Special Hammer NMOS construct and guard rings increase the allowed radiation dose to 10rad

Full design flow:

Specification development
Schematic and functional design, optimization
Radiation tolerant and parasitic-aware layout design
Post-layout simulation and optimization
Design rules development, physical and logical verification
Library support, logic synthesis, place-and-route, chip implementation

Library components:

TI-RT-Lib018 Digital Library Radiation Tolerance Characteristics 

CharacteristicParameterValue
Total ionizing dose TID 800 krad
Dose rate DR 50-200 rad/s
SET immune SET threshold LET <6.5 MeV·cm2/mg [Si]
Cross-section at LET = 6.5 ÷ 68.9 MeV·cm2/mg [Si] 2.5·10-5 ÷ 5.3·10-5 cm2
SEU immune SEU threshold LET <6.5 MeV·cm2/mg [Si]
Cross-section at LET = 6.5 ÷ 68.9 MeV·cm2/mg [Si] 1.7·10-8 ÷ 2·10-7 cm2/bit
SEFI immune SEFI threshold LET <6.5 MeV·cm2/mg [Si]
Cross-section at LET = 6.5 ÷ 68.9 MeV·cm2/mg [Si] 4.7·10-8 ÷ 7.7·10-7 cm2
SEL immune No SEL occurred during all the tests up to a LET of 68.9 MeV·cm2/mg [Si]
Catastrophic failure immune No catastrophic failure occurred during all the tests up to a LET of 68.9 MeV·cm2/mg [Si]
Radiation tolerance characteristics Neutron Displacement Damage 5·1013 n/cm2
Dose Rate Survivability 1010 R/s
Electron fluence 2·10e/cm2
Proton fluence 2·10p/cm2