The dual high-speed gate drivers are especially well suited for driving the MOSFETs and IGBTs. Each of the two outputs can source and sink 4A of current while producing voltage rise and fall times of less than 10ns. Low propagation delay and fast, matched rise and fall times make the ideal for high-frequency and high-power applications.


  • 4A Source/Sink Drive Current
  • Wide Operating Voltage Range: 7V to 40V
  • Extended Operating Temperature Range: -40°C to +150°C 
  • Outputs May be Connected in Parallel for Higher Drive Current
  • Matched Rise and Fall Times
  • Low Propagation Delay Time
  • Low Output Impedance

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